Memory properties of Si + implanted gate oxides: from MOS capacitors to nvSRAM

Charge storage properties of 20–30 nm gate oxides implanted with Si + ions are investigated using MOS capacitors, single transistor structures and a non-volatile memory. The observed programming window can reach several volts for programming with electric fields of about 4–7 MV/cm. The structures ex...

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Bibliographic Details
Published inSolid-state electronics Vol. 46; no. 11; pp. 1729 - 1737
Main Authors von Borany, J, Gebel, T, Stegemann, K.-H, Thees, H.-J, Wittmaack, M
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.2002
Subjects
Ion implantation
Nanoclusters
Non-volatile memory
Non-volatile memory
Ion implantation
Nanoclusters
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Summary:Charge storage properties of 20–30 nm gate oxides implanted with Si + ions are investigated using MOS capacitors, single transistor structures and a non-volatile memory. The observed programming window can reach several volts for programming with electric fields of about 4–7 MV/cm. The structures exhibit good retention (250 °C, 280 h) and the endurance (>10 6 w/e-cycles) considerably exceeds the typical values of present EEPROM technologies. The capability of Si implanted SiO 2 films as gate dielectrics for a real non-volatile memory is demonstrated for the first time by a 256 K-non-volatile static random access memory showing a programming window of larger than 1 V.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00142-9