Stress and misoriented area formation under large silicon carbide boule growth

The presence of slightly misoriented (less than 1°) comparatively large areas in silicon carbide boules grown by the sublimation method is one of the types of defects which can limit the operation of devices based upon such material. 6H- and 4H-SiC boules were grown by the modified Lely method elabo...

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Bibliographic Details
Published inJournal of crystal growth Vol. 198; pp. 1015 - 1018
Main Authors Bakin, A.S., Dorozhkin, S.I., Lebedev, A.O., Kirillov, B.A., Ivanov, A.A., Tairov, Yu.M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.1999
Subjects
Defect formation
Sublimation growth
Sublimation growth
Defect formation
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Summary:The presence of slightly misoriented (less than 1°) comparatively large areas in silicon carbide boules grown by the sublimation method is one of the types of defects which can limit the operation of devices based upon such material. 6H- and 4H-SiC boules were grown by the modified Lely method elaborated at the St.-Petersburg Electrotechnical University. Formation of stress and misoriented areas in SiC crystals has been investigated. Nondestructive techniques for such material characterization have been developed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01200-7