A novel gate insulator for flexible electronics

Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al 2O 3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation proces...

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Bibliographic Details
Published inOrganic electronics Vol. 4; no. 1; pp. 27 - 32
Main Authors Majewski, L.A., Grell, M., Ogier, S.D., Veres, J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2003
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Summary:Field effect transistors using a poly(triaryl amine) p-channel organic semiconductor in conjunction with anodised aluminium oxide as the gate insulator (Al 2O 3 on Al) are demonstrated. Anodised films are pinhole-free, homogenous oxide layers of precisely controlled thickness. The anodisation process requires no vacuum steps; anodised Al 2O 3 is insoluble in organic solvents, and Al films are cheaply available as laminates on flexible substrates. Anodised Al 2O 3 is confirmed to have high gate capacitance (≈60 nF/cm 2) and electric breakdown strength (>3 MV/cm in the working device). This property profile answers to the demands on gate insulators for flexible electronics applications.
ISSN:1566-1199
1878-5530
DOI:10.1016/S1566-1199(03)00005-3