Epitaxial growth of CdSeTe films by remote plasma enhanced metal organic chemical vapor deposition

• Published in: Vacuum Vol. 59; no. 2; pp. 701 - 707
• Main Authors: Noda, Daiji, Aoki, Toru, Nakanishi, Yoichiro, Hatanaka, Yoshinori
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2000
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(00)00336-5

The epitaxial growth of cadmium selenium telluride (CdSeTe) films has been studied using a remote plasma-enhanced metal organic chemical vapor deposition (RPE–MOCVD) method. Hydrogen radicals generated by inductively coupled rf remote plasma were introduced into the reaction region during the deposition. Therefore, these film growth procedures could be carried out at the low substrate temperatures below 200°C. In the CdSe y Te 1− y deposition, the composition ratio y has been obtained in the range 0 to 1 when the ratio of the Group VI source monomers was varied. The role of hydrogen radicals is considered as to decompose the metal organic source materials and to help the surface reaction for the film formation. The n-type CdSeTe layers were also obtained using n-butyliodide as a dopant source. The resistivity and carrier concentration in the CdSeTe epitaxial layer were about 3×10 −2 Ω cm and 2×10 18 cm −3, respectively. It is concluded that the CdSeTe epitaxial growth has a high potential as n-type material of the CdZnTe diode to fabricate the high-energy radiation detector.