4.1 mW 50 dBΩ 10 Gbps transimpedance amplifier for optical receivers in 0.13 μm CMOS
A transimpedance amplifier (TIA), using the combination of the shunt‐feedback topology with the regulated‐cascode input stage and broadband matching network, is designed and implemented in a 0.13‐μm CMOS technology. The proposed TIA achieves a 3‐dB bandwidth of 7.5 GHz, transimpedance gain of 50 dBΩ...
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Published in | Microwave and optical technology letters Vol. 53; no. 2; pp. 448 - 451 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Hoboken
Wiley Subscription Services, Inc., A Wiley Company
01.02.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A transimpedance amplifier (TIA), using the combination of the shunt‐feedback topology with the regulated‐cascode input stage and broadband matching network, is designed and implemented in a 0.13‐μm CMOS technology. The proposed TIA achieves a 3‐dB bandwidth of 7.5 GHz, transimpedance gain of 50 dBΩ in the presence of 300 fF photodiode capacitance. It dissipates 4.1 mW from a 1.2 V supply voltage, and occupies a chip area without pads of 0.42 × 0.17 mm2. The TIA presents the highest gain‐bandwidth product per DC power figure of merit of 578 GHz Ω/mW compared with recently published TIAs. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:448–451, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25741 |
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Bibliography: | ark:/67375/WNG-V36255MP-J ArticleID:MOP25741 istex:4EAEB98D0F9C6AFD128B613EE0E7F78EE4D5FBCB |
ISSN: | 0895-2477 1098-2760 |
DOI: | 10.1002/mop.25741 |