High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturat...

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Published inMaterials Science Forum Vol. 858; pp. 1210 - 1213
Main Authors Nagaya, Masashi, Tagawa, Miho, Takeuchi, Yukihisa, Watanabe, Shota, Ujihara, Toru, Harada, Shunta, Aoyagi, Kenta
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 24.05.2016
Subjects
Aluminum
Aluminum nitride
Chromium
Concentration (composition)
Mathematical models
Nitrogen
Single crystals
Solvents
AlN
Solution Growth
Single Crystal
Thermodynamic Calculation
High-Speed Growth
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Summary:We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.
Bibliography:Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
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ISBN:3035710422
9783035710427
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.1210