AlGaN films grown by reactive magnetron sputtering on glass substrates with different Al content

• Published in: Surfaces and interfaces Vol. 40; p. 103023
• Main Authors: Horta, Isabela Machado, Damasceno, Barbara Souza, de Oliveira, Regiane Santana, Pereira, André Luis de Jesus, Massi, Marcos, Sobrinho, Argemiro Soares da Silva, Leite, Douglas Marcel Gonçalves
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2023
• Subjects: AlGaN; GaN; Glass; Semiconductor; sputtering; Thin film; Semiconductor; sputtering; GaN; Glass; AlGaN; Thin film
• ISSN: 2468-0230; 2468-0230
• DOI: 10.1016/j.surfin.2023.103023

•Sputtering technique as a cost-effective process to obtain AlGaN films.•Different Al content in AlGaN films using reactive magnetron sputtering system.•Fine control of Al content through target power ratio.•Homogeneous phase and c-axis oriented AlGaN films.•Bandgap variation with composition in AlGaN films. AlGaN thin films with different Al content were grown via reactive magnetron sputtering onto glass substrates using independent Al and Ga targets. The quality of the films was analyzed using X-ray diffraction, Raman spectroscopy, energy dispersive spectroscopy, and UV-Vis spectrophotometry. The results show that the Al content can be effectively controlled by tuning the power ratio applied to the independent targets in different absolute situations. Moreover, all produced samples presented only wurtzite structure without indication of other phases on both X-ray diffraction and Raman spectroscopy analyses. Overall, the properties of the films had a strong correlation with the composition, such as the expected blue shift of the optical bandgap and the Raman phonon modes, and the lattice cell expansion with increasing Al content. In addition, a higher c-orientation texture together with a sharper diffraction peak were observed for samples with more Al. [Display omitted]