Amorphous Indium Titanium Zinc Oxide Thin Film Transistor and Impact of Gate Dielectrics on Its Photo-Electrical Properties

Bottom-gate thin film transistors (TFTs) with indium titanium zinc oxide (InTiZnO) active layer were prepared by radio-frequency (RF) sputtering system at room temperature. Alumina was introduced as the gate dielectric material to acquire better electrical properties by improving the quality of inte...

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Bibliographic Details
Published inECS journal of solid state science and technology Vol. 7; no. 7; pp. Q3049 - Q3053
Main Authors Hsu, Ming-Hung, Chang, Sheng-Po, Chang, Shoou-Jinn, Wu, Wei-Ting, Li, Jyun-Yi
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 01.01.2018
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Summary:Bottom-gate thin film transistors (TFTs) with indium titanium zinc oxide (InTiZnO) active layer were prepared by radio-frequency (RF) sputtering system at room temperature. Alumina was introduced as the gate dielectric material to acquire better electrical properties by improving the quality of interface between dielectric and channel layer. At zero gate bias and under 290-nm light illumination, the TFTs exhibited a photoresponsivity of 2.3 A/W. The photo-to-dark current ratio was almost up to 105 and the UV-to-visible rejection ratio was 1817. These results revealed that InTiZnO, as a novel UV-sensitive material, had potential for practical optoelectronic applications with high performance.
Bibliography:0071807JSS
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0071807jss