Silicon flow stop frame for encapsulation of CMOS microsensor chips by wet anisotropic etching in KOH

• Published in: Engineering Research Express Vol. 6; no. 2; pp. 25002 - 25011
• Main Authors: Dobroliubov, A, Kakati, A, Stokke, B T, Häfliger, P, Johannessen, E A
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2024
• Subjects: KOH; microfabrication; silicon; wet etching
• ISSN: 2631-8695; 2631-8695
• DOI: 10.1088/2631-8695/ad39c3

Abstract Bulk micromachining in silicon is governed by the etching process where anisotropic (wet) etching in KOH can yield complex structures beyond that achievable with isotropic (dry) etching techniques. One example is the miniaturised frame reported herein with an area of 2.9 to 7.5 mm 2 , walls that are 1/10 mm thick, a height of 525 μ m equipped with sloping walls that takes advantage of the 54.7° angle of the (111) planes to the horizontal (100) top surface of the wafer. Convex corners liable to damage are protected by sacrificial bridge structures which are etched thin to a point where the frame can be easily removed from the bulk substrate material. Frames made from isotropic (dry) etching processes have been made for comparison. Although the frame structure has different applications in microfabrication, the intended use is a flow stop barrier preventing liquid resins from entering the active area of a CMOS chemical sensor chip during encapsulation for use in aqueous or gaseous media. Beyond this specific proof-of-concept, the strategy is expected to be of general interest for all who treasures KOH etching and wants to explore new avenues based on this process.