Thin Si oxide films for MIS tunnel emitter by hollow cathode enhanced plasma oxidation

A DC plasma oxidation system with a hollow cathode which consists of a pair of parallel Si plates was developed. Using this system, thin Si oxide films of less than 40 nm thickness were grown on n-type Si(100) substrates, for the application to the tunnel devices. The film quality and the oxide stoi...

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Bibliographic Details
Published inThin solid films Vol. 281; pp. 412 - 414
Main Authors Usami, K., Takahashi, I., Miyake, E., Moriya, M., Cai, X.Y., Kobayashi, T., Goto, T.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.1996
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Summary:A DC plasma oxidation system with a hollow cathode which consists of a pair of parallel Si plates was developed. Using this system, thin Si oxide films of less than 40 nm thickness were grown on n-type Si(100) substrates, for the application to the tunnel devices. The film quality and the oxide stoichiometry were estimated by XPS measurements. On the oxide films, the MIS (Metal-Insulator-Semiconductor) diode type tunnel emitters were fabricated. The electrical properties of the diodes, such as I–V characteristics and electron emission into the vacuum were measured. For a typical sample, an electron emission current density of 800 pA/mm 2 into the vacuum was obtained.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(96)08689-0