Thin Si oxide films for MIS tunnel emitter by hollow cathode enhanced plasma oxidation
A DC plasma oxidation system with a hollow cathode which consists of a pair of parallel Si plates was developed. Using this system, thin Si oxide films of less than 40 nm thickness were grown on n-type Si(100) substrates, for the application to the tunnel devices. The film quality and the oxide stoi...
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Published in | Thin solid films Vol. 281; pp. 412 - 414 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.08.1996
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Subjects | |
Online Access | Get full text |
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Summary: | A DC plasma oxidation system with a hollow cathode which consists of a pair of parallel Si plates was developed. Using this system, thin Si oxide films of less than 40 nm thickness were grown on n-type Si(100) substrates, for the application to the tunnel devices. The film quality and the oxide stoichiometry were estimated by XPS measurements. On the oxide films, the MIS (Metal-Insulator-Semiconductor) diode type tunnel emitters were fabricated. The electrical properties of the diodes, such as I–V characteristics and electron emission into the vacuum were measured. For a typical sample, an electron emission current density of 800 pA/mm
2 into the vacuum was obtained. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/0040-6090(96)08689-0 |