Voltage-controlled programmable polymer memory enabled by interface nanoengineering for thermal recognition recording

An artificial thermal recognition memory system is rationally constructed by integrating a voltage-controlled programmable polymer memristor and a temperature-sensitized resistive sensor, enabling the selective recording of diverse thermal signals by using the stimulus of ‘warm’ and ‘hot’. [Display...

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Published inApplied surface science Vol. 599; p. 154034
Main Authors Zhang, Heshan, Hu, Yuefan, Zhang, Zepu, Zhou, Zhe, Ban, Chaoyi, Yan, Shiqi, Xin, Qian, Nie, Yijie, Xiu, Fei, Liu, Juqing
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.10.2022
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Summary:An artificial thermal recognition memory system is rationally constructed by integrating a voltage-controlled programmable polymer memristor and a temperature-sensitized resistive sensor, enabling the selective recording of diverse thermal signals by using the stimulus of ‘warm’ and ‘hot’. [Display omitted] •A voltage-controlled programmable polymer memory device was designed and fabricated by interfacial nanoengineering.•The interface nanopillar and nanowrinkle enable the achievement of both flash and WORM features in individual memory cells.•By integrating programmable memories with temperature sensors, the system can detect and memorize “warm” and “hot” signals at different temperature levels. Here, we report an artificial thermal recognition memory system mainly consisting of programmable polymer memristors and resistive temperature detectors. The memristor has a two-terminal structure with an insulating polymer sandwiched between a nanowrinkled graphene electrode and a nanopillar metal electrode, exhibiting novel voltage-controlled programmable rewritable and nonerasable nonvolatile memory effects. The integrated system is capable of detecting diverse weak and strong thermal stimuli and encoding them into binary memory signals for the selective recording of human thermal perception recognition. This work offers an effective strategy for constructing programmable memristive devices via interfacial nanoengineering and provides a new architecture of recognition memory for artificial intelligence.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2022.154034