High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology

High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a me...

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Published inIEEE transactions on microwave theory and techniques Vol. 40; no. 3; pp. 417 - 428
Main Authors Wang, H., Dow, G.S., Allen, B.R., Ton, T.-N., Tan, K.L., Chang, K.W., Chen, T.-h., Berenz, J., Lin, T.S., Liu, P.-H., Streit, D.C., Bui, S.B., Raggio, J.J., Chow, P.D.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.03.1992
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Chip scale packaging
Design methodology
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Gain measurement
HEMTs
Integrated circuits
Low-noise amplifiers
Millimeter wave technology
Monolithic integrated circuits
Noise figure
Noise measurement
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Gallium Indium Arsenides Mixed
Circuit design
Noise
Cross section
Monolithic construction
Modeling
Characterization
Gallium Arsenides
Energy loss
High electron mobility transistor
Microwave circuit
Microwave amplifier
Monolithic integrated circuit
Performance
Gain
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Summary:High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/22.121716