MOCVD Pd–Cu alloy films from single source heterometallic precursors

An approach to MOCVD of Pd–Cu alloy films from volatile heterometallic single source precursors (SSP) is discussed. New SSPs are designed on the basis of metal β-diketonate complexes. Pd–Cu alloy films were prepared in cold wall reactor on Si and SiO2 substrates with hydrogen as gas-reagent, total p...

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Published inVacuum Vol. 166; pp. 248 - 254
Main Authors Krisyuk, Vladislav V., Turgambaeva, Asiya E., Mirzaeva, Irina V., Urkasym kyzy, Samara, Koretskaya, Tatyana P., Trubin, Sergey V., Sysoev, Sergey V., Shubin, Yury V., Maksimovskiy, Evgene A., Petrova, Natalya I.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.2019
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Summary:An approach to MOCVD of Pd–Cu alloy films from volatile heterometallic single source precursors (SSP) is discussed. New SSPs are designed on the basis of metal β-diketonate complexes. Pd–Cu alloy films were prepared in cold wall reactor on Si and SiO2 substrates with hydrogen as gas-reagent, total pressure 10 Torr and deposition temperatures 250–400 °C, optionally with vacuum ultraviolet (VUV) irradiation. The detailed studies of thermal properties of the precursor vapor composition and Pd–Cu alloy films (composition, morphology) was performed by a set of experimental methods and DFT calculations. Comparison of fluorinated and non-fluorinated SSP showed how the modification of the monometallic constituents affects the thermal properties of the precursor and composition of the films. It was established that the ratio of metals in the film depends ultimately on the strength of binding between the monometallic subunits in the precursor, and then can be controlled by selecting the chemical composition of the precursor. •Chemical vapor deposition of Pd–Cu alloy films from the designed single source precursors.•Modification of the precursor allows increasing its volatility and improving films quality.•Metal ratio in the film can be tuned by varied deposition conditions and the precursor composition.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2019.05.021