Synthesis of Ag-embedded SnS films by the RF method for photovoltaic applications

• Published in: Surfaces and interfaces Vol. 25; p. 101151
• Main Authors: Nguyen, Tien Dai, Dang, Van Thai, Hung, Nguyen Manh, Arepalli, Vinaya Kumar, Kim, Jeha, Raj, Marnadu, Nguyen, Thi Tu Oanh
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2021
• Subjects: Photovoltaic; RF sputtering method; SnS; SnS; RF sputtering method; Photovoltaic; Ag
• ISSN: 2468-0230; 2468-0230
• DOI: 10.1016/j.surfin.2021.101151

•A radio frequency sputtering is introduced the synthesis of Ag-embedded SnS film.•Silver nanoparticles are homogeneously distributed on the SnS surface.•Ag-embedded SnS film-based solar cell shows short circuit current density (Jsc) of 17.13 mA.cm−2, open circuit (Voc) of 0.45 V, and power conversion efficiency (η) of 5.24%, higher than that of SnS film photovoltaic. In this study, we report on the synthesis of SnS/Ag/SnS trilayer films for photovoltaic applications by the radio frequency (RF) sputtering method. The effect of the Ag thin film on the physical properties of the SnS film was systematically investigated. The SnS/Ag/SnS trilayer film solar cell obtained a higher short circuit current density (Jsc) of 17.13 mA/cm2 and a higher efficiency (ηmax) of 5.24% than those of the SnS film solar cell (Jsc = 14.21 mA/cm2, η = 3.23%). The improved photocurrent density (PCD) mainly resulted from the enhancement of the separation efficiency of photogenerated electron-hole pair and the decrease in trapping charge carriers in impurity centers as well as the reduction of the leakage current in the active region. These results could be useful for fabricating the next-generation photovoltaic device with high efficiency. [Display omitted]