Density and phase dependence of edge erase band in MR/thin film head recording

• Published in: IEEE transactions on magnetics Vol. 31; no. 6; pp. 3105 - 3107
• Main Authors: Yansheng Luo, Lam, T.T., Jian-Gang Zhu
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.11.1995; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Disk recording; Electronics; Exact sciences and technology; Frequency; Image processing; Magnetic devices; Magnetic films; Magnetic force microscopy; Magnetic forces; Magnetic heads; Magnetic recording; Magnetic separation; Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Magnetoresistive device; Thin film device; Image processing; Recording head; Measuring methods; Experimental study; Magnetic force microscopy; Thin films; Magnetic head; Recording material; Recording; Magnetic device; Magnetic recording
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/20.490284

The erase band resulting from edge overwrite has been studied using magnetic force microscopy. Utilizing image processing techniques, we developed a method to accurately measure the width of the edge erase band. In this paper, we focus on the study of MR/thin film head recording. Our experimental results show the erase band width is strongly dependent on the relative phase of the transitions in the old and new tracks at low bit densities. As the recording density is increased, the erase band width increases and becomes independent of the phase change. The erase band width observed ranges from 0 to 0.7 /spl mu/m for a typical MR/thin film head with 4 /spl mu/m wide trailing pole.