Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies o...

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Bibliographic Details
Published inJournal of luminescence Vol. 236; p. 118127
Main Authors Hájek, F., Hospodková, A., Hubáček, T., Oswald, J., Pangrác, J., Dominec, F., Horešovský, R., Kuldová, K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2021
Subjects
Impurity
InGaN/GaN
Nitrides
SIMS
Nitrides
SIMS
InGaN/GaN
Impurity
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Summary:Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies of acceptors in the InGaN quantum wells. A nice correlation of the model and experimental data helps to reveal origin of Zn impurity in InGaN quantum wells. Proposed methodology can be applied to different acceptor-like defects and shine light the upon enigma of high defect concentration in the bottom quantum wells grown atop the n-type buffer layer. •Unusual Zn impurity distribution among InGaN/GaN QWs is observed.•Model based on different formation energies for acceptor defect in QWs is proposed.•From model results, the source of Zn contamination is most probably triethylgallium precursor.
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2021.118127