Elastic strain energy associated with the “A” surfaces of the III–V compounds

{111} Wafers of InSb with a thickness of the order of 10 μ are spontaneously bent, the A surface being convex. Such bending results from the elastic strain energy associated with the distortion of the bonding configuration on the A surfaces of the III–V compounds. The radius of curvature was found t...

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Bibliographic Details
Published inThe Journal of physics and chemistry of solids Vol. 23; no. 11; pp. 1553 - 1556
Main Authors Hanneman, R.E., Finn, M.C., Gatos, H.C.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.1962
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Summary:{111} Wafers of InSb with a thickness of the order of 10 μ are spontaneously bent, the A surface being convex. Such bending results from the elastic strain energy associated with the distortion of the bonding configuration on the A surfaces of the III–V compounds. The radius of curvature was found to be a function of the thickness of the wafers. An equation was derived relating the elastic strain energy with the radius of curvature, the dimensions of the wafers and the corresponding elastic constants. In the case of InSb values of approximately 10 −6 times the InSb binding energy were obtained for the stored elastic strain energy. These results were found to be consistent with X-ray diffraction data.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(62)90235-4