Photovoltaic and luminescence properties of Sb- and P-doped Si quantum dots

Sb-doped SiO 1.2 /SiO 2 and InP-doped Si/SiO 2 multilayers were prepared on p-type Si (100) wafers by ion beam sputtering and were subsequently annealed to form n-type Si quantum dots (QDs)/ptype crystalline Si heterojunction solar cells. Maximum energy-conversion efficiencies of 4.73 and 6.06% were...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 60; no. 10; pp. 1616 - 1619
Main Authors Park, Jae Hee, Shin, Dong Hee, Kim, Chang Oh, Choi, Suk-Ho, Kim, Kyung Joong
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.05.2012
한국물리학회
Subjects
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
Solar cells
Si quantum dots
Doping
Photoluminescence
InP
Sb
Heterojunction
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Summary:Sb-doped SiO 1.2 /SiO 2 and InP-doped Si/SiO 2 multilayers were prepared on p-type Si (100) wafers by ion beam sputtering and were subsequently annealed to form n-type Si quantum dots (QDs)/ptype crystalline Si heterojunction solar cells. Maximum energy-conversion efficiencies of 4.73 and 6.06% were obtained from the Sb- and the P-doped Si-QD solar cells, respectively. Based on the photovoltaic (PV) parameters, including the open-circuit voltage, short-circuit current density, fill factor, and energy-conversion efficiency, and on the photoluminescence (PL) spectra, we discuss possible physical mechanisms to explain the close correlation between the PV and the PL characteristics. These results are very promising for the development of next-generation all-Si-QD solar cells.
Bibliography:G704-000411.2012.60.10.035
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.60.1616