Thermally stimulated current measurements in Cu and O-doped GaP
Thermally stimulated current measurements have been performed in Cu and O-doped GaP. Diffusion of Cu produces two hole traps at 0.55 and 0.39 eV in p-type and an electron trap at 0.70 eV in n-type material. Two electron traps at 0.72 and 0.80 eV are associated with the presence of O in the n-type ep...
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Published in | Journal of luminescence Vol. 12-13; pp. 515 - 519 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
01.03.1976
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Abstract | Thermally stimulated current measurements have been performed in Cu and O-doped GaP. Diffusion of Cu produces two hole traps at 0.55 and 0.39 eV in p-type and an electron trap at 0.70 eV in n-type material. Two electron traps at 0.72 and 0.80 eV are associated with the presence of O in the n-type epitaxial layers. |
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AbstractList | Thermally stimulated current measurements have been performed in Cu and O-doped GaP. Diffusion of Cu produces two hole traps at 0.55 and 0.39 eV in p-type and an electron trap at 0.70 eV in n-type material. Two electron traps at 0.72 and 0.80 eV are associated with the presence of O in the n-type epitaxial layers. |
Author | Mürau, P.C. Bhargava, R.N. Herko, S.P. Seymour, R.J. Harnack, P.M. |
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Cites_doi | 10.1063/1.1655201 10.1063/1.1660991 10.1016/0022-2313(72)90010-5 10.1063/1.88069 10.1016/0022-2313(72)90015-4 10.1007/BF02652950 10.1103/PhysRevB.2.387 10.1149/1.2134224 10.1063/1.1654407 10.1016/0022-0248(72)90229-1 10.1103/PhysRevLett.27.183 10.1016/S0022-3697(71)80141-5 10.1016/0022-2313(73)90063-X 10.1063/1.1661078 10.1016/0022-2313(73)90059-8 10.1109/T-ED.1971.17169 10.1063/1.1656966 10.1103/PhysRevB.7.2473 |
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