Thermally stimulated current measurements in Cu and O-doped GaP

Thermally stimulated current measurements have been performed in Cu and O-doped GaP. Diffusion of Cu produces two hole traps at 0.55 and 0.39 eV in p-type and an electron trap at 0.70 eV in n-type material. Two electron traps at 0.72 and 0.80 eV are associated with the presence of O in the n-type ep...

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Bibliographic Details
Published inJournal of luminescence Vol. 12-13; pp. 515 - 519
Main Authors Bhargava, R.N., Harnack, P.M., Herko, S.P., Mürau, P.C., Seymour, R.J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.1976
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Summary:Thermally stimulated current measurements have been performed in Cu and O-doped GaP. Diffusion of Cu produces two hole traps at 0.55 and 0.39 eV in p-type and an electron trap at 0.70 eV in n-type material. Two electron traps at 0.72 and 0.80 eV are associated with the presence of O in the n-type epitaxial layers.
ISSN:0022-2313
1872-7883
DOI:10.1016/0022-2313(76)90132-0