Transferring of GaAs microtips using selective wet etching Al0.7Ga0.3As sacrificial layer
GaAs pyramidal microtips were successfully transferred from GaAs substrate to target wafer by a simple technique, i.e., selective wet etching off AlGaAs sacrificial layer. A GaAs/Al0.7Ga0.3As/GaAs sandwich structure is firstly formed on GaAs (0 0 1) substrate by metalorganic chemical vapor depositio...
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Published in | Microelectronic engineering Vol. 85; no. 7; pp. 1481 - 1483 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier Science
01.07.2008
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Subjects | |
Online Access | Get full text |
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Summary: | GaAs pyramidal microtips were successfully transferred from GaAs substrate to target wafer by a simple technique, i.e., selective wet etching off AlGaAs sacrificial layer. A GaAs/Al0.7Ga0.3As/GaAs sandwich structure is firstly formed on GaAs (0 0 1) substrate by metalorganic chemical vapor deposition, and then GaAs pyramidal microtips are grown on the sandwich structure using selective liquid-phase epitaxy. The GaAs microtips are removed from the sandwich structure by selective wet etching Al0.7Ga0.3As layer using concentrated HCl solution. Finally, the tips are glued onto the target wafer by a negative photoresist. During this transfer process the tips are completely encapsulated in a positive photoresist to protect against attack. Scanning electron microscopy images show that GaAs tips can be successfully transferred without any damage by this technique. The achievement reported here represents a significant step towards the application of scanning near-field optical microscopy. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2007.11.002 |