Large-signal modeling method for power FETs and diodes

Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of sem...

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Bibliographic Details
Published inJournal of semiconductors Vol. 30; no. 6; pp. 57 - 60
Main Author 孙璐 王家礼 王珊 李雪铮 石慧 王娜 郭生平
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2009
Subjects
二极管
功率FET
半导体器件
大信号模型
建模方法
数字示波器
非线性散射
黑箱模型
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ISSN1674-4926
DOI10.1088/1674-4926/30/6/064003

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Summary:Under a large signal drive level,a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes.A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices.The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.
Bibliography:large signal model
nonlinear scattering function
TN386
TN722.75
semiconductor devices
large signal model; extraction method; nonlinear scattering function; semiconductor devices
11-5781/TN
extraction method
ISSN:1674-4926
DOI:10.1088/1674-4926/30/6/064003