A delta-doped amorphous silicon thin-film transistor with high mobility and stability

• Published in: Journal of the Korean Physical Society Vol. 61; no. 11; pp. 1835 - 1839
• Main Authors: Kim, Pyunghun, Lee, Kyung Min, Lee, Eui-Wan, Jo, Younjung, Kim, Do-Hyung, Kim, Hong-jae, Yang, Key Young, Son, Hyunji, Choi, Hyun Chul
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01.12.2012; 한국물리학회
• Subjects: Mathematical and Computational Physics; Particle and Nuclear Physics; Physics; Physics and Astronomy; Theoretical; 물리학; a-Si:H TFT; Mobility; Delta doping
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.61.1835

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH 3 ) flow rate and the distance from the n + a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ∼0.23 cm 2 /Vs (compared to a conventional a-Si:H TFT with 0.15 cm 2 /Vs) and a desirable stability under a bias-temperature stress test.