Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC) m /(YC) n with X,Y (≡Si, Ge, Sn) Superlattices

• Published in: Materials Vol. 17; no. 13; p. 3082
• Main Authors: Talwar, Devki N, Semone, Sky, Becla, Piotr
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 23.06.2024
• Subjects: Acoustics; Chemical vapor deposition; Dynamic structural analysis; Electrons; Extreme environments; Germanium; Heterostructures; Infrared spectroscopy; Interfaces; interfacial layer thickness; lattice dynamics; Lattice vibration; localization of atomic displacements; Molecular beam epitaxy; novel C-based (XC)m/(YC)n superlattices; Organic chemicals; Phonons; Photonics; Raman intensity profiles; Raman spectra; Semiconductors; Silicon; Spectrum analysis; Superlattices; Thickness; Tin; lattice dynamics; interfacial layer thickness; novel C-based (XC)m/(YC)n superlattices; Raman intensity profiles; localization of atomic displacements
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma17133082

Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and X Y C alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal (XC)m/(YC)n as well as graded (XC)10-∆/(X0.5Y0.5C)∆/(YC)10-∆/(X0.5Y0.5C)∆ SLs by meticulously including the interfacial layer thickness ∆ (≡1-3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing ∆, the results revealed, however, considerable "downward" shifts of high frequency COMs and "upward" shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of ∆. Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures.