Development of a photonic integrated transceiver chip for WDM transmission

• Published in: IEEE photonics technology letters Vol. 6; no. 11; pp. 1327 - 1329
• Main Authors: Matz, R., Bauer, J.G., Clemens, P., Heise, G., Mahlein, H.F., Metzger, W., Michel, H., Schulte-Roth, G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.1994; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Cost function; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Fiber lasers; Indium phosphide; Miscellaneous; Monolithic integrated circuits; Optical and optoelectronic circuits; Optical device fabrication; Optical fiber networks; Photonic integrated circuits; Power generation; Transceivers; Wavelength division multiplexing; Scanning electron microscopy; Binary compound; Circuit gain; Voltage current curve; Indium Phosphides; Current-optical power characteristic; Epitaxy; Organometallic compound; Wavelength division multiplexing; Selective epitaxial growth; Experimental study; III-V compound; Wavelength; Thin film; Transceiver; Growth from vapor; Microelectronic fabrication; Photonic band; Manufacturing process; Miniaturization; Monolithic integrated circuit; Transmission loss
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.334828

With the observed expansion of fiber-optic networks and the movement of line terminals towards the individual customer the need for cost-effective fabrication of customer access modules for interactive services arises. Monolithic integration of the module functions on InP is frequently seen as a means to reduce module costs. Here we describe a generic fabrication process for InP photonic integrated circuits and demonstrate an initial transceiver chip with transmit, receive and 1300/1530 nm wavelength division multiplexing functions. The chip output power reaches 1 mW at 1530 nm with a laser threshold current of 20 mA. The detection efficiency at 1300 nm is 0.1 A/W of fiber power.< >