Thin films of thermoelectric Mg2Sn containing nano-sized metal Sn phase by magnetron sputtering

• Published in: Chemical physics letters Vol. 788; p. 139305
• Main Authors: Liu, Ying, Song, Guihong, Li, Guipeng, Wu, Yusheng, Du, Hao, You, Junhua
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 16.02.2022
• Subjects: Mg2Sn film; Nano-sized Sn phase; Resistivity; Seebeck coefficient; Thermoelectric materials; Seebeck coefficient; Nano-sized Sn phase; Thermoelectric materials; Mg2Sn film; Resistivity
• ISSN: 0009-2614; 1873-4448
• DOI: 10.1016/j.cplett.2021.139305

[Display omitted] •The thermoelectric Mg2Sn films with nano-sized metal Sn phase were prepared by sputtering.•Carrier motion is hindered by interface scattering of nano-sized metal Sn phase in Mg2Sn matrix.•The Seebeck coefficient greatly increases due to existing nano-sized secondary phase.•It is beneficial to increase power factor to add conductive nano-sized secondary phase in films. Mg2Sn films with nano-sized metal Sn phase were prepared by magnetron sputtering. The nano-sized metal Sn phase in films gradually increased with increasing single sputtering time on alloy target. The carrier concentration increased and the carrier mobility first decreased and then slightly increased with increasing nano-sized metal Sn phase. The resistivity and Seebeck coefficient all exhibited a trend of first increasing and then decreasing with the increase of nano-sized metal Sn phase. The Seebeck coefficient greatly increases due to existing moderate nano-sized secondary phase. It is beneficial to increase the power factor that the cubic Mg2Sn thin films contain an appropriate amount of conductive nano-sized metal Sn phase.