High-performance large-area InGaAs MSM photodetectors with a pseudomorphic InGaP cap layer

• Published in: IEEE photonics technology letters Vol. 7; no. 8; pp. 914 - 916
• Main Authors: Yuang, Rong-Heng, Shieh, Hung-Chang, Chien, Yi-Jiunn, Chan, Yi-Jen, Chyi, Jen-Inn, Lin, Wei, Tu, Yuan-Kuang
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.08.1995; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Bandwidth; Dark current; Detectors; Electronics; Exact sciences and technology; Fabrication; Fingers; Indium gallium arsenide; Indium phosphide; Laboratories; Optoelectronic devices; Parasitic capacitance; Photodetectors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ternary compound; Gallium Arsenides; Integrated optoelectronics; Indium Phosphides; Pseudomorphic growth; Photodetectors; Experimental study; Indium Arsenides; MSM structure; III-V compound; Production process
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.404013

We report the fabrication and characteristics of high-performance InGaAs MSM photodetectors with a 300-μm×300-μm square and a 300-μm-diameter circular detection area. With a pseudomorphic In/sub 0.9/Ga/sub 0.1/P cap layer, the detectors exhibit dark current densities less than 1 pA/μ on finger spacing. Bandwidth over 1 GHz has been obtained for these large-area detectors. Our results also show that the circular detector exhibits better speed performance as compared to the square one due to its smaller parasitic RC constant.