Effect of the inclusion of Fe2O3 on the optical and electrical transport properties into sodium-zinc-phosphate quaternary glassy systems

Glass systems, xFe2O3–(35-x)Na2O–25ZnO–40P2O5) (x = 10, 15, 20, and 25 mol%), were prepared using the melt-quenching technique. FTIR analysis revealed stretching vibrations of the P–O–P and P–O bonds and XRD investigation revealed a pure amorphous structure. It was discovered that with rising Fe2O3...

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Published inMaterials today communications Vol. 38; p. 107785
Main Authors Ghosh, Bidyut Kumar, Biswas, Dipankar, Ganguly, Saurav, Debnath, Ajit, Mandal, Debabrata, Shaharukh, Sk, Adhikari, Shuma, Mondal, Rittwick, Kabi, Soumyajyoti, Das, Anindya Sundar
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2024
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Summary:Glass systems, xFe2O3–(35-x)Na2O–25ZnO–40P2O5) (x = 10, 15, 20, and 25 mol%), were prepared using the melt-quenching technique. FTIR analysis revealed stretching vibrations of the P–O–P and P–O bonds and XRD investigation revealed a pure amorphous structure. It was discovered that with rising Fe2O3 content (x), the values of density increased, but the values of molar volume decreased. The Fe2O3 incorporation into the glass matrix resulted in decrement in the optical band gap energy (Eopt) value from 2.99 to 2.16 eV. The addition of Fe2O3 to the glass network reduced the quantity of non-bridging oxygen ions, improving the observed refractive index value. According to the Mott and Greaves model, the small polaron hopping model was responsible for the DC conductivity mechanism, and the density of states at the Fermi level increased as DC conductivity increased with increasing Fe2O3 content, but hopping distance (Rhop) and hopping energy (Whop) sharply decreased. It was concluded that the AC conductivity mechanism followed the correlated barrier hopping model as the power-law exponent (s) of Jonscher's universal power law decreased with temperature. AC conductivity increased with rising Fe2O3 concentration due to a decrement in the polaron hopping distance value and an increment in the concentration of defect pair states. [Display omitted]
ISSN:2352-4928
2352-4928
DOI:10.1016/j.mtcomm.2023.107785