High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer
We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity...
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| Published in | Journal of the Korean Physical Society Vol. 65; no. 7; pp. 1174 - 1178 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Seoul
The Korean Physical Society
01.10.2014
한국물리학회 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0374-4884 1976-8524 |
| DOI | 10.3938/jkps.65.1174 |
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| Abstract | We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (
V
th
) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO
X
distributed on the a-IGZO surface reduced the adsorption and the desorption of H
2
O and O
2
. This process is applicable to the TFT manufacturing process with a variable sputtering target. |
|---|---|
| AbstractList | We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (
V
th
) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO
X
distributed on the a-IGZO surface reduced the adsorption and the desorption of H
2
O and O
2
. This process is applicable to the TFT manufacturing process with a variable sputtering target. We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxidethin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (Vth) under high temperature andhumidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. Theenhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths thangallium does. Additionally, SiOX distributed on the a-IGZO surface reduced the adsorption andthe desorption of H2O and O2. This process is applicable to the TFT manufacturing process witha variable sputtering target. KCI Citation Count: 1 |
| Author | Park, Jea-Gun Lee, Hyoung-Rae |
| Author_xml | – sequence: 1 givenname: Hyoung-Rae surname: Lee fullname: Lee, Hyoung-Rae organization: Department of Electronics and Communication Engineering, Hanyang University – sequence: 2 givenname: Jea-Gun surname: Park fullname: Park, Jea-Gun email: parkjgl@hanyang.ac.kr organization: Department of Electronics and Communication Engineering, Hanyang University |
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| CitedBy_id | crossref_primary_10_1016_j_mtcomm_2022_103213 crossref_primary_10_1038_srep33006 crossref_primary_10_1016_j_vacuum_2022_110963 |
| Cites_doi | 10.1038/nature03090 10.1002/adma.201002397 10.1063/1.3634053 10.1063/1.3503971 10.1063/1.2838380 10.1109/LED.2012.2190036 10.1063/1.3479925 10.1063/1.3530453 10.1109/LED.2010.2059694 10.3938/jkps.54.549 10.1021/am402065k 10.1063/1.3564882 10.1063/1.3413939 10.3938/jkps.58.158 10.1063/1.2990657 10.1063/1.3272016 10.1063/1.3597299 |
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| Keywords | IGZO TFT NBIS Si doped Stability |
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| References | JeongJ KYangHWJeongJ HMoY GKimH DAppl. Phys. Lett.20089312350810.1063/1.29906572008ApPhL..93l3508J YangS HJiK HKimU KHwangC SParkS H KHwangC SJangJJeongJ KAppl. Phys. Lett.20119910210310.1063/1.36340532011ApPhL..99j2103Y ParkJ CKimS WKimS IKimC JSongI HParkY SJungU IKimD HLeeJ SAdv. Mater.201022551210.1002/adma.201002397 ChongEKimS HLeeS YAppl. Phys. Lett.20109725211210.1063/1.35304532010ApPhL..97y2112C KimJ HKimU KChungY JHwangC SAppl. Phys. Lett.20119823210210.1063/1.35972992011ApPhL..98w2102K ChoiJ BChangY JParkC HChoiB RKimH SParkK CJ. Korean Phys. Soc.20095454910.3938/jkps.54.5492009JKPS...54..549C KimG HJeongW HAhnB DShinH SKimH JKimH JRyuM KParkK BSeonJ BLeeS YAppl. Phys. Lett.20109616350610.1063/1.34139392010ApPhL..96p3506K LiuP TChouY TTengL FAppl. Phys. Lett.20099523350410.1063/1.32720162009ApPhL..95w3504L YuXZhouNSmithJLinHStallingsKYuJMarksT JFacchettiAACS Appl. Mater. Interfaces20135798310.1021/am402065k ParkJ CLeeH NIEEE Electron Dev. Lett.20123381810.1109/LED.2012.21900362012IEDL...33..818P JiK HKimJ IJungH YParkS YChoiRKimU KHwangC SLeeD SHwangH SJeongJ KAppl. Phys. Lett.20099810350910.1063/1.35648822011ApPhL..98j3509J ParkJ SJeongJ KChungH JMoY GKimH DAppl. Phys. Lett.20089207210410.1063/1.28383802008ApPhL..92g2104P NomuraKOhtaHTakagiAKamiyaTHiranoMHosonoHNature200443248810.1038/nature030902004Natur.432..488N JeonJ HKimJ HRyuM KJ. Korean Phys. Soc.20115815810.3938/jkps.58.158 ChowdhuryM D HMiglioratoPJangJAppl. Phys. Lett.20109717350610.1063/1.35039712010ApPhL..97q3506C ChongEYoonS CLeeS YAppl. Phys. Lett.20109710210210.1063/1.34799252010ApPhL..97j2102C JeonS HKimS IParkS HSongI HParkJ CKimS WKimC JIEEE Electron Dev. Lett.201031112810.1109/LED.2010.20596942010IEDL...31.1128J J K Jeong (2150_CR16) 2008; 93 K Nomura (2150_CR1) 2004; 432 P T Liu (2150_CR9) 2009; 95 G H Kim (2150_CR6) 2010; 96 E Chong (2150_CR10) 2010; 97 K H Ji (2150_CR4) 2009; 98 J C Park (2150_CR14) 2012; 33 M D H Chowdhury (2150_CR8) 2010; 97 J H Jeon (2150_CR3) 2011; 58 S H Jeon (2150_CR13) 2010; 31 J S Park (2150_CR17) 2008; 92 J B Choi (2150_CR2) 2009; 54 J H Kim (2150_CR7) 2011; 98 J C Park (2150_CR12) 2010; 22 S H Yang (2150_CR5) 2011; 99 E Chong (2150_CR15) 2010; 97 X Yu (2150_CR11) 2013; 5 |
| References_xml | – reference: ChoiJ BChangY JParkC HChoiB RKimH SParkK CJ. Korean Phys. Soc.20095454910.3938/jkps.54.5492009JKPS...54..549C – reference: YuXZhouNSmithJLinHStallingsKYuJMarksT JFacchettiAACS Appl. Mater. Interfaces20135798310.1021/am402065k – reference: JeongJ KYangHWJeongJ HMoY GKimH DAppl. Phys. Lett.20089312350810.1063/1.29906572008ApPhL..93l3508J – reference: LiuP TChouY TTengL FAppl. Phys. Lett.20099523350410.1063/1.32720162009ApPhL..95w3504L – reference: ParkJ SJeongJ KChungH JMoY GKimH DAppl. Phys. Lett.20089207210410.1063/1.28383802008ApPhL..92g2104P – reference: ChongEYoonS CLeeS YAppl. Phys. Lett.20109710210210.1063/1.34799252010ApPhL..97j2102C – reference: YangS HJiK HKimU KHwangC SParkS H KHwangC SJangJJeongJ KAppl. Phys. Lett.20119910210310.1063/1.36340532011ApPhL..99j2103Y – reference: ChowdhuryM D HMiglioratoPJangJAppl. Phys. Lett.20109717350610.1063/1.35039712010ApPhL..97q3506C – reference: JiK HKimJ IJungH YParkS YChoiRKimU KHwangC SLeeD SHwangH SJeongJ KAppl. Phys. Lett.20099810350910.1063/1.35648822011ApPhL..98j3509J – reference: JeonJ HKimJ HRyuM KJ. Korean Phys. Soc.20115815810.3938/jkps.58.158 – reference: ParkJ CKimS WKimS IKimC JSongI HParkY SJungU IKimD HLeeJ SAdv. Mater.201022551210.1002/adma.201002397 – reference: KimG HJeongW HAhnB DShinH SKimH JKimH JRyuM KParkK BSeonJ BLeeS YAppl. Phys. Lett.20109616350610.1063/1.34139392010ApPhL..96p3506K – reference: KimJ HKimU KChungY JHwangC SAppl. Phys. Lett.20119823210210.1063/1.35972992011ApPhL..98w2102K – reference: NomuraKOhtaHTakagiAKamiyaTHiranoMHosonoHNature200443248810.1038/nature030902004Natur.432..488N – reference: JeonS HKimS IParkS HSongI HParkJ CKimS WKimC JIEEE Electron Dev. Lett.201031112810.1109/LED.2010.20596942010IEDL...31.1128J – reference: ChongEKimS HLeeS YAppl. Phys. Lett.20109725211210.1063/1.35304532010ApPhL..97y2112C – reference: ParkJ CLeeH NIEEE Electron Dev. Lett.20123381810.1109/LED.2012.21900362012IEDL...33..818P – volume: 432 start-page: 488 year: 2004 ident: 2150_CR1 publication-title: Nature doi: 10.1038/nature03090 – volume: 22 start-page: 5512 year: 2010 ident: 2150_CR12 publication-title: Adv. Mater. doi: 10.1002/adma.201002397 – volume: 99 start-page: 102103 year: 2011 ident: 2150_CR5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3634053 – volume: 97 start-page: 173506 year: 2010 ident: 2150_CR8 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3503971 – volume: 92 start-page: 072104 year: 2008 ident: 2150_CR17 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2838380 – volume: 33 start-page: 818 year: 2012 ident: 2150_CR14 publication-title: IEEE Electron Dev. Lett. doi: 10.1109/LED.2012.2190036 – volume: 97 start-page: 102102 year: 2010 ident: 2150_CR10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3479925 – volume: 97 start-page: 252112 year: 2010 ident: 2150_CR15 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3530453 – volume: 31 start-page: 1128 year: 2010 ident: 2150_CR13 publication-title: IEEE Electron Dev. Lett. doi: 10.1109/LED.2010.2059694 – volume: 54 start-page: 549 year: 2009 ident: 2150_CR2 publication-title: J. Korean Phys. Soc. doi: 10.3938/jkps.54.549 – volume: 5 start-page: 7983 year: 2013 ident: 2150_CR11 publication-title: ACS Appl. Mater. Interfaces doi: 10.1021/am402065k – volume: 98 start-page: 103509 year: 2009 ident: 2150_CR4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3564882 – volume: 96 start-page: 163506 year: 2010 ident: 2150_CR6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3413939 – volume: 58 start-page: 158 year: 2011 ident: 2150_CR3 publication-title: J. Korean Phys. Soc. doi: 10.3938/jkps.58.158 – volume: 93 start-page: 123508 year: 2008 ident: 2150_CR16 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2990657 – volume: 95 start-page: 233504 year: 2009 ident: 2150_CR9 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3272016 – volume: 98 start-page: 232102 year: 2011 ident: 2150_CR7 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3597299 |
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| Snippet | We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of... We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxidethin-film transistors (TFTs) by using the co-deposition of... |
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| Title | High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer |
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