High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 65; no. 7; pp. 1174 - 1178
Main Authors Lee, Hyoung-Rae, Park, Jea-Gun
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.10.2014
한국물리학회
Subjects
Brief Reports
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
물리학
IGZO TFT
NBIS
Si doped
Stability
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ISSN0374-4884
1976-8524
DOI10.3938/jkps.65.1174

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Summary:We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H 2 O and O 2 . This process is applicable to the TFT manufacturing process with a variable sputtering target.
Bibliography:G704-000411.2014.65.7.027
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.65.1174