Advanced thermal processing of semiconductor materials in the millisecond range

The paper gives an overview of our recent work in the field of thermal processing of advanced semiconductor structures by millisecond flash lamp annealing (FLA). Topics covered include ultra-shallow junction (USJ) formation and heteroepitaxial growth of improved quality thin films of cubic silicon c...

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Bibliographic Details
Published inVacuum Vol. 78; no. 2; pp. 673 - 677
Main Authors Skorupa, W., Anwand, W., Panknin, D., Voelskow, M., Yankov, R.A., Gebel, T.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 30.05.2005
Subjects
Flash lamp annealing
Hetroepitaxy
Silicon
Silicon carbide
Ultra shallow junctions
Ultra shallow junctions
Silicon
Silicon carbide
Hetroepitaxy
Flash lamp annealing
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Summary:The paper gives an overview of our recent work in the field of thermal processing of advanced semiconductor structures by millisecond flash lamp annealing (FLA). Topics covered include ultra-shallow junction (USJ) formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide (3C-SiC). The latter is a new development, which opens up promising 3C-SiC growth possibilities and may lead to wider application of FLA. The so-called FLASiC process ( Flash LAmp Supported Deposition of SiC) is based on a new type of nanoscale liquid-phase epitaxy at the SiC/Si interface resulting in the formation of a thin, low-defect density seed layer of SiC onto which thicker epitaxial SiC layers can be grown.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2005.01.105