InSnO:N homojunction thin-film transistors fabricated at room temperature

• Published in: Vacuum Vol. 213; p. 112099
• Main Authors: Lin, Dong, Yang, Jing-Ze, Cheng, Jian-Rui, Deng, Xu-Chu, Chen, Yu-Shan, Zhuang, Ping-Ping, Li, Tie-Jun, Liu, Jing
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2023
• Subjects: Conductivity; Crystallinity; Nitrogen-doped indium tin oxide; Thin-film transistor; Nitrogen-doped indium tin oxide; Conductivity; Crystallinity; Thin-film transistor
• ISSN: 0042-207X
• DOI: 10.1016/j.vacuum.2023.112099

Nitrogen-doped indium tin oxide (ITON) thin films of different thicknesses were deposited by radio frequency magnetron sputtering. The crystallinity, surface morphologies, and chemical compositions of the thin films were found to be influenced by film thickness, and changes in these factors eventually caused changes in the conductivity of the thin films. Therefore, we used ultrathin ITON thin films as channels and an 85-nm-thick ITON as the source/drain electrodes to fabricate thin-film transistors. The optimal device fabricated at room temperature (∼25 °C) has a threshold voltage of −2.5 V and a field-effect mobility of 10.31 cm2/(V∙s). •ITON TFTs was fabricated at room temperature and exhibited a field-effect mobility of 10.31 cm2/(V∙s).•Influence of channel crystallinity on ITON TFT performances was reported.•The channel and source/drain electrodes of ITON TFTs are the same material, only differing in thickness.