Perovskite photovoltaic interface: From optimization towards exemption
Organic-inorganic halide perovskite solar cells (PSCs) have emerged as a paradigm-shifting technology in photovoltaics, offering a low-cost avenue for the high-efficiency conversion of solar energy into electricity. Recent studies underscore the crucial role of material choice and structural design...
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Published in | Nano energy Vol. 124; p. 109503 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Organic-inorganic halide perovskite solar cells (PSCs) have emerged as a paradigm-shifting technology in photovoltaics, offering a low-cost avenue for the high-efficiency conversion of solar energy into electricity. Recent studies underscore the crucial role of material choice and structural design with specific focus on interface architecture in dictating the device efficiency and degradation kinetics of these devices. This review examines the influence of interfaces on the performance of PSCs. It categorizes and scrutinizes four distinct interfaces: electrode/electron transport layer (ETL), ETL/perovskite, perovskite/hole transport layer (HTL), and HTL/electrode, delving into their respective contributions to device performance. Furthermore, it provides a comprehensive overview of interface engineering strategies in carrier transport layer-free structures and carbon-based frameworks, elucidating their impact on enhancing reliability. Finally, the review outlines prospective directions for interface engineering, poised to fortify the stability and efficiency of PSCs in the quest for sustainable and reliable solar energy solutions.
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•The interface layer plays the crucial role by nuanced design choices in optimizing device performance.•The review meticulously analyzes four interfaces in perovskite solar cells to categorize their contributions.•This review prospects a comprehensive overview of advanced interface engineering approaches to enhance device reliability. |
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ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2024.109503 |