Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures

• Published in: IEEE photonics technology letters Vol. 6; no. 1; pp. 92 - 94
• Main Authors: Wan, H.W., Chong, T.C., Chua, S.J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.1994; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Miscellaneous; Molecular beam epitaxial growth; Optical and optoelectronic circuits; Optical devices; Optical fiber polarization; Optical modulation; Optical polarization; Optical signal processing; Optical waveguides; Photoconductivity; Quantum well devices; Tensile strain; Ternary compound; Gallium; Composition effect; Experimental study; Gallium Arsenides; Aluminium Arsenides; Tensile stress; Optical polarization; Optical switching; Size effect; Strained quantum well; Indium Arsenides; Optical modulation; Photoelectric current; Electrooptical absorption
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.265900

The polarization-dependent electroabsorption in lattice-matched and strained GaInAs/AlInAs quantum well structures is studied using photocurrent spectral measurements. The results show that the application of a biaxial tensile strain by the appropriate selection of the Ga mole fraction and the well size reduces the difference between the transition energies of the heavy and light holes due to quantization, while a compressive strain further enhances the polarization dependence.< >