Graphene sheets via microwave chemical vapor deposition

• Published in: Chemical physics letters Vol. 467; no. 4; pp. 361 - 364
• Main Authors: Yuan, G.D., Zhang, W.J., Yang, Y., Tang, Y.B., Li, Y.Q., Wang, J.X., Meng, X.M., He, Z.B., Wu, C.M.L., Bello, I., Lee, C.S., Lee, S.T.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 05.01.2009
• ISSN: 0009-2614; 1873-4448
• DOI: 10.1016/j.cplett.2008.11.059

Graphene sheets (GSs) via microwave chemical vapor deposition (CVD) method: the preferential etching of the inter-planar carbon species/bonding by excited hydrogen atoms in the plasma was considered essential for the formation of graphene structure. High-quality graphene sheets (GS) were synthesized on stainless steel substrates at ∼500 °C by microwave plasma chemical vapor deposition (CVD) in an atmosphere of methane/hydrogen mixture. The GS product was characterized to contain mostly 1- or 2–3-layers using scanning electron microscopy, transmission electron microscopy/selective area electron diffraction, atomic force microscopy, and Raman spectroscopy. The present CVD approach is capable of producing graphenes with high yield and high purity with no carbon impurities such as carbon nanotubes.