Influence of silicon-sapphire interface defects on SOS MESFET behavior

Silicon MESFETs in silicon-on-sapphire SOS technology were studied and a comparison was made between simulated and measured I- V characteristics of normally-off transistors. The comparisons have shown that the effective conducting-channel depth is only 40% of the actual Si film thickness. A novel si...

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Published inSolid-state electronics Vol. 31; no. 10; pp. 1493 - 1496
Main Authors Nylander, J.O., Magnusson, U., Rosling, M., Tove, P.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.1988
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Abstract Silicon MESFETs in silicon-on-sapphire SOS technology were studied and a comparison was made between simulated and measured I- V characteristics of normally-off transistors. The comparisons have shown that the effective conducting-channel depth is only 40% of the actual Si film thickness. A novel simulation approach to compensate for the lack of free carriers close to the sapphire interface is described. Results from measured transistors is presented together with simulated behavior, and also a comparison between simulated and experimental complementary MESFET (CMES) inverter behavior is done. The influence of interface defects on subthreshold current is also discussed.
AbstractList Silicon MESFETs in silicon-on-sapphire SOS technology were studied and a comparison was made between simulated and measured I- V characteristics of normally-off transistors. The comparisons have shown that the effective conducting-channel depth is only 40% of the actual Si film thickness. A novel simulation approach to compensate for the lack of free carriers close to the sapphire interface is described. Results from measured transistors is presented together with simulated behavior, and also a comparison between simulated and experimental complementary MESFET (CMES) inverter behavior is done. The influence of interface defects on subthreshold current is also discussed.
Author Rosling, M.
Tove, P.A.
Magnusson, U.
Nylander, J.O.
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Cites_doi 10.1109/TNS.1984.4333534
10.1016/0038-1101(85)90084-X
10.1063/1.333346
10.1063/1.325607
10.1109/T-ED.1976.18530
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10.1049/el:19870144
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