Influence of silicon-sapphire interface defects on SOS MESFET behavior

Silicon MESFETs in silicon-on-sapphire SOS technology were studied and a comparison was made between simulated and measured I- V characteristics of normally-off transistors. The comparisons have shown that the effective conducting-channel depth is only 40% of the actual Si film thickness. A novel si...

Full description

Saved in:
Bibliographic Details
Published inSolid-state electronics Vol. 31; no. 10; pp. 1493 - 1496
Main Authors Nylander, J.O., Magnusson, U., Rosling, M., Tove, P.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.10.1988
Online AccessGet full text

Cover

More Information
Summary:Silicon MESFETs in silicon-on-sapphire SOS technology were studied and a comparison was made between simulated and measured I- V characteristics of normally-off transistors. The comparisons have shown that the effective conducting-channel depth is only 40% of the actual Si film thickness. A novel simulation approach to compensate for the lack of free carriers close to the sapphire interface is described. Results from measured transistors is presented together with simulated behavior, and also a comparison between simulated and experimental complementary MESFET (CMES) inverter behavior is done. The influence of interface defects on subthreshold current is also discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90020-2