Solution-processed high entropy metal oxides as dielectric layers with high transmittance and performance and application in thin film transistors

• Published in: Surfaces and interfaces Vol. 40; p. 103147
• Main Authors: Liang, Zhihao, Wu, Weijing, Fu, Xiao, Ning, Honglong, Su, Guoping, Wang, Hongcheng, Qiu, Tian, Yang, Zhao, Yao, Rihui, Peng, Junbiao
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2023
• Subjects: Dielectric layer; High entropy metal oxides; Solution process; Thin films transistors; High entropy metal oxides; Thin films transistors; Solution process; Dielectric layer
• ISSN: 2468-0230; 2468-0230
• DOI: 10.1016/j.surfin.2023.103147

High entropy metal oxides (HEMOs) are emerging materials with unique structures and functional properties, but it's barely researched as dielectric materials. This paper investigates solution-processed HEMOs as the dielectric material. Six HEMOs systems were compared and the role of various metal oxides in the high entropy system is revealed. It turns out that the (HfMgTiYZr)Ox system has the most excellent dielectric properties with a low leakage current density of 2.9 × 10−7A/cm2@2MV/cm and a high dielectric constant of 13.0. Moreover, the transmittance of the films is over 88% in the range of the visible light. The high performances of the HEMOs derive from the complex internal structure and the single solid solution phase. Applying (HfMgTiYZr)Ox as dielectric layers, the thin film transistors attain an Ion/off of 6.3 × 108, a mobility of 14.2cm2/vs, a ss of 0.34 V, and a Vth of 1.3 V. In this paper, we demonstrate that HEMOs have good dielectric properties and can be used in thin film transistors which implies a promising future in the application of electronic devices. [Display omitted]