Optical and photoelectrochemical properties of Cu2SrSnS4 thin film fabricated by a facial ball-milling method

• Published in: Materials letters Vol. 237; pp. 130 - 133
• Main Authors: Tong, Zhengfu, Yuan, Jiangyuan, Chen, Jiarui, Wu, Anqi, Huang, Weiwei, Han, Changcun, Cai, Qijun, Ma, Chonghao, Liu, Yang, Fang, Li, Liu, Zhifeng
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.02.2019
• Subjects: Ball-milling; Cu2SrSnS4; Optical; Solar cell; Solar energy materials; Thin films; Thin films; Solar cell; Cu2SrSnS4; Ball-milling; Optical; Solar energy materials
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2018.11.083

•Earth-abundant and non-toxicity quaternary chalcogenide Cu2SrSnS4 is prepared by a facial ball-milling method and its formation process is revealed.•Suitable bandgap and relative long carrier lifetime of the Cu2SrSnS4 film have been discovered.•The potential of the Cu2SrSnS4 film for photoelectric conversion application is explored. Earth-abundant and non-toxicity quaternary chalcogenide Cu2SrSnS4 is prepared by a facial ball-milling method. Its formation is revealed to be from the reaction between Cu2SnS3 and SrS at 600 °C. The bandgap of the prepared Cu2SrSnS4 film is speculated around 1.78 eV according to absorption test. The carrier lifetime of the prepared Cu2SrSnS4 film is about 2.06 ns. The photocurrent density of the Cu2SrSnS4 film is about 150 μA cm−2 at −670 mV bias vs Ag/AgCl electrode and it repeats after 10 cycles of 1000 s. Its notable generation of photocurrent and photoelectrochemical stability indicates its potential for photoelectric conversion application.