Spectroscopic ellipsometry study of buried graphitized layers in the ion-implanted diamond

Ellipsometric analysis of the buried graphitized layer formed in the He +-implanted and annealed diamond has been made. Spectroscopic ellipsometry data in the 360–1050 nm range at the incident angles between 65° and 75° were fitted based on a three-layer structure model. Using optical spectroscopy,...

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Bibliographic Details
Published inVacuum Vol. 78; no. 2; pp. 583 - 587
Main Authors Khomich, A.V., Kovalev, V.I., Zavedeev, E.V., Khmelnitskiy, R.A., Gippius, A.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 30.05.2005
Subjects
Annealing
Diamond
Graphitization
Ion implantation
Optical properties
Spectroscopic ellipsometry
Ion implantation
Annealing
Diamond
Spectroscopic ellipsometry
Optical properties
Graphitization
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Summary:Ellipsometric analysis of the buried graphitized layer formed in the He +-implanted and annealed diamond has been made. Spectroscopic ellipsometry data in the 360–1050 nm range at the incident angles between 65° and 75° were fitted based on a three-layer structure model. Using optical spectroscopy, atomic force and white-light interferometry microscopy data the n and k spectra of graphitized layer, its thickness and roughness were determined with high accuracy.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2005.01.090