Inkjet-printed thin-film transistors using surfactant-based transition-metal dichalcogenide nanocomposites suspended in polymeric semiconductors
Abstract Ink formulations containing a suspension of single-crystalline molybdenum disulfide (MoS 2 ) nanosheets suspended in the polymeric semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) were inkjet printed for the fabrication of thin-film transistors. The MoS 2 nanosheets were treated with th...
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Published in | Flexible and printed electronics Vol. 9; no. 1 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.03.2024
|
Subjects | |
Online Access | Get full text |
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Summary: | Abstract
Ink formulations containing a suspension of single-crystalline molybdenum disulfide (MoS
2
) nanosheets suspended in the polymeric semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) were inkjet printed for the fabrication of thin-film transistors. The MoS
2
nanosheets were treated with the surfactant trichloro(dodecyl)silane (DDTS) to functionalize the MoS
2
surface and created a more stable suspension, reducing the agglomeration of MoS
2
suspended in the P3HT solution. This ink formulation was inkjet printed onto the surface of thermal oxide coated, p
+
-Si wafers to form common-gate thin-film transistor (TFT) device structures. The printed semiconductor formed the active region of a hybrid MoS
2
suspension in P3HT of the TFTs. The field-effect mobility for the hybrid-ink TFTs was found to be three times (3×) higher compared to reference devices using pristine P3HT without the suspension. The functionalized MoS
2
suspension was also found to form thinner nanosheet suspensions within the P3HT matrix that resulted in approximately 60% higher field-effect mobility compared to hybrid inks without the surfactant. The enhancement of the electrical properties of the TFTs was determined to be due to a structural change in the thin-film semiconductor. The observed current-voltage (
I
-
V
) changes were correlated to measurable structural alterations in the semiconductor thin film characterized by X-ray diffraction, atomic force microscopy, and UV-visible absorption spectroscopy. |
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Bibliography: | FPE-100873.R2 |
ISSN: | 2058-8585 2058-8585 |
DOI: | 10.1088/2058-8585/ad1e2b |