Spin injection into heavily-doped n-GaN via Schottky barrier

• Published in: Journal of semiconductors Vol. 44; no. 8; pp. 82501 - 65
• Main Authors: Sun, Zhenhao, Tang, Ning, Chen, Shuaiyu, Zhang, Fan, Fan, Haoran, Zhang, Shixiong, Wang, Rongxin, Lin, Xi, Liu, Jianping, Ge, Weikun, Shen, Bo
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.08.2023; Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter,Peking University,Beijing 100871,China%Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China%International Center for Quantum Materials,Peking University,Beijing 100871,China; State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China%State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China
• Subjects: GaN; magnetoresistance; Schottky barrier; spin injection; magnetoresistance; GaN; spin injection; Schottky barrier
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/44/8/082501

Abstract Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.