Bandgap engineering of Gallium oxides by crystalline disorder

• Published in: Materials today physics Vol. 18; p. 100369
• Main Authors: Chen, Yancheng, Lu, Yingjie, Yang, Xun, Li, Shunfang, Li, Kaiyong, Chen, Xuexia, Xu, Zhiyang, Zang, Jinhao, Shan, Chongxin
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.05.2021
• Subjects: Bandgap engineering; Crystalline disorder; Gallium oxide; Homojunction photodetector; Bandgap engineering; Crystalline disorder; Homojunction photodetector; Gallium oxide
• ISSN: 2542-5293; 2542-5293
• DOI: 10.1016/j.mtphys.2021.100369

Gallium oxide (Ga2O3) has recently emerged as a promising candidate for applications in high-power and radio frequency electronics, deep-ultraviolet optoelectronics, etc. The engineering of bandgap and constructing of heterostrucutres are fundamental steps towards such applications. However, efficient bandgap engineering of Ga2O3 is still a huge challenge. Herein, by the combination of experiments and first-principles calculations, we report that the oxygen vacancy (VO) density and crystalline disorder of the Ga2O3 can be tuned continuously by modulating the O/Ga ratio during the growth process. The VO can introduce localized defect states right above the valence band, thus improving the conductivity of the films. While the crystalline disorder can lead to the shift of the valence band towards the conduction band, thus narrowing the bandgap of the Ga2O3 significantly. As a demonstration of the practical applications of the bandgap engineering by the crystalline disorder, Ga2O3-based deep-ultraviolet homojunction photodetectors have been developed. The device shows a peak responsivity of 22.1 mA/W and a detectivity of 8.7 × 1012 Jones at 0 V bias, which are among the best values for zero-biased Ga2O3 photodetectors. The present findings on tuning the bandgap of Ga2O3via structural disorder are expected to pave a new avenue to achieving high performance Ga2O3 optoelectronic and electronic devices. For the first time, the bandgap of Ga2O3 modulated by crystalline disorder was proved by the experiments and first-principles calculations. As a demonstration of the practical applications of the bandgap engineering by crystalline disorder, deep-ultraviolet Ga2O3 homojunction photodetectors have been developed. The responsivity, EQE, detectivity, and response speed of the devices are all among the best values for zero-biased Ga2O3 photodetectors. [Display omitted] •Experiments and first-principles calculations prove for the first time that the band gap of Ga2O3 can be adjusted by crystal disorder.•The VO can introduce localized defect states right above the valence band.•The crystalline disorder can lead to shift of the valence band towards the conduction band.•High-performance Ga2O3 homojunction photodetector has been developed.