On the growth and lasing characteristics of thick Nd:GGG waveguiding films fabricated by pulsed laser deposition

• Published in: Applied physics. A, Materials science & processing Vol. 79; no. 4-6; pp. 1203 - 1206
• Main Authors: GRIVAS, C, MAY-SMITH, T. C, SHEPHERD, D. P, EASON, R. W
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Berlin Springer 01.09.2004
• Subjects: Applied sciences; Circuit properties; Diodes; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Fluorescence; Integrated optics. Optical fibers and wave guides; Lasers; Lasing; Materials science; Optical and optoelectronic circuits; Pulsed laser deposition; Pumping; Thick films; Ternary compound; Gadolinium oxides; Impurity; Gallium oxide; Neodymium addition; Fluorescence; Pulsed laser deposition; Manufacturing; Experimental study; Waveguide; Single crystal
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-004-2718-7

Pulsed laser deposition of epitaxial, single-crystal Nd:Gd3Ga5O12 (Nd:GGG) films on Y3Al5O12 substrates with thicknesses up to 135 {/content/65DQ71P70613Y1EC/xxlarge956.gif}m and propagation losses as low as 0.1 dB/cm is reported. Rutherford backscattering spectrometry has shown constant stoichiometry for the films throughout their depth. Fluorescence properties were similar to that of the bulk Nd:GGG crystal used as a target material for the deposition and lasing action has been observed at 1059.0 and 1060.6 nm after pumping by a Ti:sapphire laser operating at 808 nm. A laser threshold of 18 mW has been obtained and a slope efficiency of 17.5% has been observed using an output coupler of 4.5%. The low losses in combination with the high numerical aperture (0.75) and the thickness of the structures make them suitable for high-power diode pumping.