Tunable multiband THz perfect absorber due to the strong coupling of distributed Bragg reflector cavity mode and Tamm plasma polaritons modes based on MoS2 and graphene

• Published in: Optics communications Vol. 550; p. 129947
• Main Authors: Qin, Kaipeng, Deng, Xin-Hua, Zhang, Pingsheng, Guo, Fumin, Song, Yingming, Tao, Liangyu, yuan, Jiren
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2024
• Subjects: Mode coupling; Molybdenum disulfide; Optical Tamm state; Terahertz multi-channel absorber; Mode coupling; Molybdenum disulfide; Terahertz multi-channel absorber; Optical Tamm state
• ISSN: 0030-4018; 1873-0310
• DOI: 10.1016/j.optcom.2023.129947

In this work, we propose a multiband terahertz perfect absorber by combining a distributed Bragg reflector (DBR) cavity with molybdenum disulfide (MoS2) and graphene. The absorption peak comes from the strong coupling of the DBR cavity mode and the two Tamm plasma polaritons (TPPs) modes. Our numerical simulations demonstrate that the degree of coupling in this hybrid system is tunable by adjusting the structural parameters, thereby allowing for control over the position and intensity of the absorption peaks. Furthermore, utilizing the tunable Fermi energy level of graphene and controlled variation of the molybdenum disulfide carrier concentration enables active switching between absorption-free, dual-band, and triple-band absorption. Additionally, the high absorption efficiency in a wide angular range and sensitivity make this device highly versatile. The coupled harmonic oscillator model is used to explain the strong coupling phenomena of the system. This simple layered structure provides a hybrid coupling system with a controlled number of bands suitable for potential active terahertz optoelectronic devices. •The proposed absorber has a simple structure, stable absorption, and effective dynamic tunability.•Benefiting from the tunable Fermi energy level of graphene and the controlled variation of molybdenum disulfide carrier concentration, the device can actively switch between absorption-free, dual-band, and triple-band absorption near 1 THz.•The device has high absorption efficiency over a wide angular range (within 40°) and high sensitivity making the device highly versatile.•The device has potential applications in actively integrated terahertz optoelectronic devices, such as modulators, filters, and transmitters.