AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

• Published in: Journal of lightwave technology Vol. 28; no. 18; pp. 2724 - 2729
• Main Authors: Pownall, R, Kindt, J, Nikkel, P, Lear, K L
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 15.09.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit properties; CMOS; CMOS process; Complementary metal-oxide-semiconductor (CMOS)-compatible optoelectronic integrated circuit; Contact; Contacts; Detectors; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Exact solutions; Information, signal and communications theory; Integrated circuit measurements; Integrated optoelectronics. Optoelectronic circuits; leaky-mode metal-semiconductor-metal photodetectors; Mathematical analysis; Miscellaneous; Modulation; Modulation, demodulation; Optical and optoelectronic circuits; optical interconnect; Optical waveguides; Optoelectronic devices; Photoconducting materials; Photoconductivity; Photodetectors; Pulse measurements; Schottky barriers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Signal and communications theory; Telecommunications and information theory; Time domain; Performance evaluation; Pulse width; Rise time; Measurement sensor; Polycrystal; optical interconnect; Injection laser; Leaky wave; MSM structure; Photodetector; Time response; leaky-mode metal-semiconductor-metal photodetectors; Time domain method; Integrated optoelectronics; Complementary metal-oxide-semiconductor (CMOS)-compatible optoelectronic integrated circuit; Pulse response; Complementary MOS technology; Modulation; Optoelectronic device; CMOS integrated circuits; Photoconductivity; Optical interconnection
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.2010.2063016

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%-90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.