Gadolinium oxide single crystals: Optical properties and radiation resistance

• Published in: Optical materials Vol. 141; p. 113966
• Main Authors: Pustovarov, V.A., Nikolaev, R.E., Trifonov, V.A., Tarasenko, M.S., Dhoble, S.J., Tavrunov, D.A., Naumov, N.G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2023
• Subjects: Energy transfers; Gd2O3 single crystal; Intraconfigurational f-f transitions; Photoluminescence; Radiation-induced defects; Tb3+ ions; Intraconfigurational f-f transitions; Energy transfers; Radiation-induced defects; Gd2O3 single crystal; Photoluminescence; Tb3+ ions
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2023.113966

Large-size high optical quality Gd2O3 single crystals were grown from solution at T = 1145 °C by Czochralski method. XRD analysis showed that the crystal structure is characterized by a single cubic phase (С-phase). Absorption spectra and luminescence properties of Gd2O3 doped with impurity Tb3+ ion were studied. The absorption spectrum is determined by electronic transitions in Gd3+ ion (spectral region of 245–315 nm) and interband electron transitions below 240 nm. Intraconfigurational radiative f-f transitions from 5D4 level in Tb3+ ion are clearly manifested upon both UV- and X-ray excitation. At the same time, 6PJ → 8S7/2 radiative transitions in Gd3+ ions are completely absent. This fact indicates high efficiency of nonradiative energy transfer from Gd3+ to Tb3+ ions. Thermo-luminescent spectroscopy shows the absence of charge carrier trapping centers, which proves the perfection of its crystal structure. The crystal under study shows high radiation resistance to high-energy (E = 10 MeV, D = 105 kGy) electron beam. However, the effects of irradiation appear only in the photoluminescence excitation spectra and thermally stimulated luminescence. [Display omitted] •High optical quality single crystals were grown from solution by Czochralski method.•XRD analysis of the Gd2O3 crystals showed monophase cubic structure.•Optical and luminescence properties of Gd2O3 doped with Tb3+ ion were studied.•Intraconfigurational f-f transitions were studied upon UV, X-ray and e-beam excitation.•High resistance to irradiation with high-energy electrons is noted.