Sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arrays

Strained-quantum-well InGaAs-GaAs-AlGaAs lasers and laser arrays with record low threshold currents of 0.6 mA for cleaved devices and 0.145 mA for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These lase...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 7; no. 6; pp. 593 - 595
Main Authors Hanmin Zhao, Yong Cheng, MacDougal, M.H., Gye-Mo Yang, Dapkus, P.D.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.06.1995
Institute of Electrical and Electronics Engineers
Subjects
Chemical lasers
Chemical vapor deposition
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Lasers
Optical arrays
Optics
Physics
Plasma temperature
Pulsed laser deposition
Semiconductor laser arrays
Semiconductor lasers; laser diodes
Substrates
Threshold current
Wet etching
Aluminium arsenides
CVD
Gallium arsenides
Inorganic compounds
Semiconductor lasers
Ternary compounds
Linear array
Strained quantum well
Binary compounds
Experimental study
Indium arsenides
Online AccessGet full text

Cover

More Information
Summary:Strained-quantum-well InGaAs-GaAs-AlGaAs lasers and laser arrays with record low threshold currents of 0.6 mA for cleaved devices and 0.145 mA for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.388734