Principle and application of low energy inverse photoemission spectroscopy: A new method for measuring unoccupied states of organic semiconductors

• Published in: Journal of electron spectroscopy and related phenomena Vol. 204; pp. 116 - 124
• Main Author: Yoshida, Hiroyuki
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2015
• Subjects: Electron affinity; Low-energy inverse photoemission spectroscopy; Organic semiconductor; Unoccupied state; Unoccupied state; Electron affinity; Organic semiconductor; Low-energy inverse photoemission spectroscopy
• ISSN: 0368-2048; 1873-2526
• DOI: 10.1016/j.elspec.2015.07.003

•Principle of low energy inverse photoemission spectroscopy is described.•Instruments including electron sources and photon detectors are shown.•Recent results about organic devices and fundamental studies are reviewed.•Electron affinities of typical organic semiconductors are compiled. Information about the unoccupied states is crucial to both fundamental and applied physics of organic semiconductors. However, there were no available experimental methods that meet the requirement of such research. In this review, we describe a new experimental method to examine the unoccupied states, called low-energy inverse photoemission spectroscopy (LEIPS). An electron having the kinetic energy lower than the damage threshold of organic molecules is introduced to a sample film, and an emitted photon in the near-ultraviolet range is detected with high resolution and sensitivity. Unlike the previous inverse photoemission spectroscopy, the sample damage is negligible and the overall resolution is a factor of two improved to 0.25eV. Using LEIPS, electron affinity of organic semiconductor can be determined with the same precision as photoemission spectroscopy for ionization energy. The instruments including an electron source and photon detectors as well as application to organic semiconductors are presented.