Abnormal bipolar resistive switching behavior in carbon-iron composite films with different thicknesses

• Published in: Vacuum Vol. 135; pp. 115 - 120
• Main Authors: Zhou, J.W., Li, T.R., Zhang, D., Ren, B., Zhang, S.W., Huang, J., Zhang, J.M., Wang, L., Jiang, Y.C., Gao, J., Wang, L.J.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.2017
• Subjects: Amorphous carbon; Carbon-iron composite; Resistive switching; Thickness; Thickness; Carbon-iron composite; Amorphous carbon; Resistive switching
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2016.10.034

Carbon-iron composite films with different thicknesses (50, 100 and 150 nm) were deposited by DC magnetron sputtering method using a composite target (Fe: 4 at%, C: 96 at%). The resistive switching behaviors of Pt/Al/a-C:Fe/Au/Ti structures with different a-C:Fe film thicknesses are investigated. Abnormal bipolar resistive switching characteristics were observed in all Pt/Al/a-C:Fe/Au/Ti memory cells. Considering the endurance and retention properties, the RRAM cell with 100 nm thick a-C:Fe film as the dielectric layer showed the best performance with on/off-resistance ratio ∼10, and retention time >104 s. Based on the results of the X-ray photoelectron spectroscopy depth profile, the resistive switching behavior is attributed to mutative Al3+ fraction at the Al/a-C:Fe interface and the migration of Au ions between two electrodes. •Abnormal bipolar resistive switching characteristics were observed in all Pt/Al/a-C:Fe/Au/Ti memory cells.•The resistive switching behavior is attributed to mutative Al3+ fraction at the Al/a-C:Fe interface.•The influences of the variation in Schottky barrier height near the Al interface were also discussed.